Advanced Search:

Contact us

联系我们

Telephone:(852) 2838 3620

Email:sales@silverwing.com.hk

Address: Unit 2, 4/F, Kwai Cheong Centre, 50 Kwai Cheong Road, Kwai Chung, New Territories, Hong Kong
Your Current Location :Home » News » Industry  » Auto power components market prospect

Auto power components market prospect

Source: Time:2017-05-02 09:28:53 views:


        Auto power electronic products is becoming one of the key drivers of semiconductor industry.These electronic products including power components, is to support the new electric car range to achieve the core component of at least 200 miles.

        Although shipments of smartphones is much higher than cars (2015 to 1.4 billion, sales of 88 million cars), but the car of semiconductor components content is much higher.Auto power IC steady growth, the industry in 2015-2020 compound annual growth rate is expected to reach 8%.Especially battery-powered electric vehicles in the industry to become a strong growth impetus, in May 2015 Teardown.com for the BMW i3 electric cars, according to a report of the model material list contains more than 100 power related chips.

        Follow Moore's law and shrinking the size of the advanced logic transistor, FET power components are usually use the older technology nodes, using 200 mm silicon wafers (and smaller).Power components in the past few decades, however, continuous development and upgrade.For example, the thicker the PVD coating aluminum (3-10 microns) must be deposited in the front of the power components, in order to realize the heat dissipation and improve electrical properties.If there is no correct deposition, thick aluminum layer prone to whisker and dislocation, lead to disastrous consequences.Applied materials, the manufacturing of PVD HDR high speed deposition aluminum reaction chamber device can ensure that as much as possible to reduce such defects, and the deposition rate more than 50% higher than other competing technologies.

        In addition, more than 5 mm to 150 mm thick epitaxial wafers, complex after doping, can achieve low resistance (Rds), high cut-off resistance (Roff) and faster switching speed.

        Compared with the traditional extension reaction cavity, silver wing launched components to shorten the cleaning time, reduce the cost of ownership of the equipment.The system shows excellent chip uniformity and resistivity, can meet the demand of advanced power components.

        Semiconductor thin film stack layer structural changes, such as the grid structure from the flat (horizontal) device (vertical component) into the channel structure, make the insulated gate bipolar transistor (IGBT) can be implemented at a lower loss rate, faster switching speed.Similarly, from multilayer epitaxial technology into deep groove filling process can greatly improve the performance of the super junction MOSFET (SJM).

        Etching process needs some improvement and adjustment, in order to adapt to these solutions, including higher deep wide than structure.After the improved epitaxial silicon membrane and injection doping distribution can also enhance the product performance.

        Power components manufacturers keep improving.Public data shows high conductivity of Hitachi IGBT adopts single floating P layer, in order to improve controllability and switching voltage grid.ABB semiconductors in grooved gate building P type columnar injection, to produce super junction effect, so as to achieve faster switching speed.

        By reducing lath chip thickness, which can effectively reduce the storage charge high-speed switching.Fuji electric recently developed drift layer is thinner, electric field termination layer groove spacing smaller, stronger the seventh generation of IGBT.

        Experts have realized, however, the various performance of silicon-based device is close to the limit.Power components due to the limitation of silicon material itself, every one-time can improve only can bring some improvement.

Wide band gap power components

         Looking for new power IC industry wide bandgap (WBG) materials, the semiconductor performance to a new level.Silicon carbide (SiC) and gallium nitride (GaN) is the preferred material, both have advantages and disadvantages.As semiconductor compound material, they have a larger band gap width and the breakdown voltage, power components is made of silicon unmatched performance.They are widely expected to lead the next generation of power components, semiconductor age big changes.

                                          Home |  About us |  Product  |  Solution Provider  |   News |  Contact us  粤ICP备17091917号-1

                              HK Address: Unit 2, 4/F, Kwai Cheong Centre, 50 Kwai Cheong Road, Kwai Chung, New Territories, Hong Kong


Top