Seeing the development status of domestic IGBT from Huawei's admission IGBT Industry News Silver Wing

At the end of November 2019, the media in the industry reported that Huawei has begun to dig out IGBT manufacturers and develop their own IGBT devices. During the Spring Festival, Mantianxin wrote a report on Shengang Securities and reviewed it with everyone. Let's take a look at the current status of Huawei's entry IGBT and domestic IGBT development.

IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), which also has MOSFET The advantages of high input impedance and GTR (power transistor) low on-voltage drop. The saturation voltage of GTR decreases, the current carrying density is large, but the driving current is large; the MOSFET driving power is very small, the switching speed is fast, but the turn-on voltage drop is large, and the current carrying density is small. IGBT combines the advantages of the above two devices, the driving power is small and the saturation voltage is reduced. It is very suitable to be used in the converter system with DC voltage of 600V and above, such as AC motor, frequency converter, switching power supply, lighting circuit, traction drive and other fields.

According to IC Insights' forecast, in the future semiconductor power devices, MOSFET and IGBT devices will be the strongest growth points. IGBT is the core device of energy conversion and transmission, commonly known as the "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment. With the development of new energy vehicles, rail transit and smart grids, the demand for IGBT has ushered in a substantial growth.

1. Huawei entered the market to promote the development of IGBT

According to reports from Jiwei.com, Huawei has started digging people from IGBT manufacturers to develop its own IGBT devices. With its own technical strength, Huawei has become a leading company in the field of UPS power supply, currently occupying the first market share in the global data center field. As the core device of energy conversion and transmission, IGBT is also the core device of Huawei UPS power supply.

Currently, the IGBTs required by Huawei are mainly purchased from manufacturers such as Infineon. Affected by the Sino-US trade war, Huawei began to get involved in the field of power semiconductors in order to ensure unrestricted product supply. At present, in the fields of diodes, rectifiers, MOS tubes, etc., Huawei is actively cooperating with domestic manufacturers such as Anshi Semiconductor and Huawei Electronics to increase the purchase of domestic power semiconductor products, but in the field of high-end IGBTs, because there is currently no domestic The manufacturer has production strength, Huawei can only start independent research and development.

Silicon carbide and gallium nitride are the core development direction of power semiconductors in the future. Global power semiconductor giants such as Infineon and ST, as well as domestic power manufacturers such as China Resources Microelectronics and CRRC Times Semiconductor, are focusing on research in this field.

In order to develop power semiconductors, Huawei has also started to lay out the third-generation semiconductor materials. According to reports from Jiwei.com, Hubble Technology Investment Co., Ltd., a subsidiary of Huawei, invested in Shandong Tianyue Advanced Materials Technology Co., Ltd. in August this year, holding 10% of the shares. . Compared with traditional silicon materials, the forbidden band width of silicon carbide is 3 times that of silicon; the thermal conductivity is 4-5 times that of silicon; the breakdown voltage is 8 times that of silicon; the electron saturation drift rate is 2 times that of silicon, therefore, Silicon carbide is particularly suitable for manufacturing high-frequency, high-pressure, high-frequency, high-frequency, high-power devices.

2. IGBT domestic status

At present, the global IGBT market is mainly occupied by foreign companies. In 2017, Infineon ranked first with a market share of 27.1%, Mitsubishi ranked second with 16.4%, and Fuji Electric ranked third with a market share of 10.7% . The market share of the top 5 companies in the world is 67.5%, and the industry concentration is relatively high.

In terms of market size, the global IGBT market reached USD 5.836 billion in 2018, an increase of 11.06% from USD 5.255 billion in 2017.

Domestically, the domestic IGBT market reached 26.19 billion yuan in 2018, a 97.66% increase from the 13.25 billion yuan in 2017. With the accelerated development of rail transit, smart grid, aerospace, electric vehicles and new energy equipment, the domestic IGBT demand has ushered in, and the domestic IGBT market has shown an accelerated growth trend in recent years.

3. Domestic output of IGBT is in short supply

Driven by the significant growth in IGBT market demand, the domestic IGBT industry has started to accelerate growth in recent years. In addition to Huawei's layout, some companies such as BYD Microelectronics, CRRC Times Semiconductor, Star Corporation, Silan Microelectronics and others have already achieved mass production and have performed well in the market.

In addition, in recent years, power semiconductor manufacturers with low technology content such as diodes, triodes, thyristors, etc., Huawei Electronics, Yangjie Technology, Jiejie Microelectronics and Taiji shares have all broken into the field of MOSFET and IGBT. Downstream application manufacturers have also deployed in the upstream IGBT field.

Although many domestic manufacturers have joined the IGBT product layout, the domestic IGBT market is still low in output, which is in short supply compared with the huge domestic demand. In 2018, the domestic IGBT output was 11.15 million, an increase of 2.95 million from the 8.2 million in 2017, an increase of 36% year-on-year. However, in 2018, the demand for domestic IGBT products reached 78.98 million, and the gap between supply and demand reached 67.83 million. The domestic output is seriously insufficient.

4. Summary

At present, domestic low-end markets such as white goods, inverters, inverter power supplies, and industrial control have gradually completed localization substitutions. However, in areas with high requirements such as new energy vehicles, new energy power generation, and smart grids, domestic IGBT manufacturers need to break through.

In the field of new energy vehicles, IGBT module products from BYD Microelectronics, Star Corporation, SAIC Infineon and other manufacturers have been shipped, and CRIC Times Semiconductor's automotive IGBT products have also been submitted for sample testing; in the State Grid, except China The IGBT products of Car Times Semiconductor have entered the market. In October 2019, Guodian NARI announced that it will jointly invest in the establishment of NARI Lianyan Power Semiconductor Co., Ltd. Module industrialization project.

However, due to difficulties in the IGBT industry, such as high technical threshold, lack of talents, difficulty in market development, and large capital investment, domestic enterprises have been slow in the process of industrialization. With the transfer of global manufacturing to China, China ’s power semiconductors The market occupies more than 50% of the world market and is the world's largest IGBT market. However, IGBT products rely heavily on imports, and more than 90% of IGBT devices rely on imports in the mid-to-high-end field. The demand for IGBT localization is urgent.

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Seeing the development status of domestic IGBT from Huawei's admission IGBT

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