The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise.
|
MAXIMUM RATINGS: (TA=25℃) |
SYMBOL |
Quantity |
UNITS |
|
Collector-Emitter Voltage |
VCEO | 50 | V |
|
Collector-Base Voltage |
VCBO | 50 | V |
|
Emitter-Base Voltage |
VEBO | 4.5 | V |
|
Collector Current |
IC | 50 | mA |
|
Power Dissipation |
PD |
350 |
mW |
|
Power Dissipation (TC=25°C) |
PD | 1.0 | W |
|
Operating and Storage Junction Temperature |
TJ, Tstg | -65 to +150 | ℃ |
|
Thermal Resistance |
JA | 357 | ℃/W |
|
Thermal Resistance |
JC | 125 | ℃/W |
《2N5210》download
