The CENTRAL SEMICONDUCTOR TIP36C in the TO-247 case is a silicon PNP power transistor manufactured by the epitaxial base process, designed for high current amplifier and switching applications.
MAXIMUM RATINGS: (TC=25°C)
| / |
SYMBOL |
/ |
UNITS |
|
Collector-Base Voltage |
VCBO |
100 |
V |
|
Collector-Emitter Voltage |
VCEO |
100 |
V |
|
Emitter-Base Voltage |
VEBO |
5.0 |
V |
|
Continuous Collector Current |
IC |
25 |
A |
|
Peak Collector Current |
ICM |
40 |
A |
|
Continuous Base Current |
IB |
5.0 |
A |
|
Power Dissipation |
PD |
125 |
W |
|
Operating and Storage Junction Temperature |
TJ, Tstg |
-65 to +150 |
°C |
|
Thermal Resistance |
ΘJC |
1.0 |
°C/W |
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
| SYMBOL | TEST CONDITIONS |
MIN |
MAX |
UNITS |
|
ICEO |
VCE=60V |
/ | 1.0 | mA |
|
ICES |
VCE=100V |
/ | 0.7 | mA |
|
IEBO |
VEB=5.0V |
/ | 1.0 | mA |
|
BVCEO |
IC=30mA |
100 | / | V |
|
VCE(SAT) |
IC=15A, IB=1.5A | / | 1.8 | V |
|
VCE(SAT) |
IC=25A, IB=5.0A |
/ | 4.0 | V |
|
VBE(ON) |
VCE=4.0V, IC=15A |
/ | 2.0 | V |
| VBE(ON) |
VCE=4.0V, IC=25A |
/ | 4.5 | V |
|
hFE |
VCE=4.0V, IC=1.5A |
25 | / | / |
|
hFE |
VCE=4.0V, IC=15A |
10 | 100 | / |
|
hfe |
VCE=10V, IC=1.0A, f=1.0kHz |
25 | / | / |
|
fT |
VCE=10V, IC=1.0A, f=1.0MHz |
3.0 | / | MHz |
