The semiconductor 2N5770 type is a NPN Silicon Epitaxial Planar Transistors designed for high frequency amplifier and oscillator applications.
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MAXIMUM RATINGS: (TA=25℃） |
SYMBOL | Quantity | UNITS |
|
Collector-Base Voltage |
VCBO | 30 | V |
|
Collector-Emitter Voltage |
VCEO | 15 | V |
|
Emitter-Base Voltage |
VEBO | 3.0 | V |
|
Collector Current |
IC | 50 | mA |
| Power Dissipation | PD | 625 | mW |
|
Operating and Storage Junction Temperature |
TJ, Tstg | -65 to +150 | ℃ |
|
Thermal Resistance |
JA | 200 | ℃/W |
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