The CENTRAL SEMICONDUCTOR CMDD6001 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for switching applications requiring a extremely low leakage diode.
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MAXIMUM RATINGS: (TA=25℃） |
SYMBOL | Quantity | UNITS |
|
Continuous Reverse Voltage |
VR |
75 | V |
|
Peak Repetitive Reverse Voltage |
VRRM |
100 | V |
|
Continuous Forward Current |
IF |
250 | mA |
|
Peak Repetitive Forward Current |
IFRM |
250 | mA |
|
Peak Forward Surge Current, tp=1.0μs |
IFSM |
4.0 | A |
|
Peak Forward Surge Current, tp=1.0s |
IFSM |
1.0 | A |
| Power Dissipation |
PD |
250 | mW |
|
Operating and Storage Junction Temperature |
TJ, Tstg |
-65 to +150 | ℃ |
|
Thermal Resistance |
JA | 500 | ℃/W |
《CMDD6001 》download
