The CENTRAL SEMICONDUCTOR CJD122 and CJD127 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications.
|
MAXIMUM RATINGS: (TA=25℃) |
SYMBOL | Quantity | UNITS |
|
Collector-Base Voltage |
VCBO | 100 | V |
|
Collector-Emitter Voltage |
VCEO | 100 | V |
|
Emitter-Base Voltage |
VEBO | 5.0 | V |
|
Continuous Collector Current |
IC | 8.0 | A |
|
Peak Collector Curren |
ICM |
16 | A |
|
Continuous Base Current |
IB |
120 | mA |
|
Power Dissipation |
PD | 20 | W |
|
Power Dissipation (TA=25℃) |
PD | 1.75 | W |
|
Operating and Storage Junction Temperature |
TJ, Tstg |
-65 to +150 |
℃ |
| Thermal Resistance | JC | 6.25 | ℃/W |
|
Thermal Resistance |
JA | 71.4 | ℃/W |
《CJD127》download
