The CENTRAL SEMICONDUCTOR CEDM7001 is an N-Channel Enhancement-mode silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low theshold voltage.
CEDM7001 MOSFET FEATURES:
• 100mW Power Dissipation
• 0.4mm low package profile
• Low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small leadless surface mount package
CEDM7001 MOSFET APPLICATIONS:
• Load/Power switches
• DC - DC converters
• Battery powered portable equipment
|
MAXIMUM RATINGS: (TA=25°C) |
SYMBOL | Quantity | UNITS |
|
Drain-Source Voltage |
VDS |
20 | V |
|
Gate-Source Voltage |
VGS |
10 | V |
|
Continuous Drain Current (Steady State) |
ID |
100 | mA |
|
Peak Drain Current, tp=10μs |
IDM |
200 | mA |
|
Power Dissipation |
PD |
100 | mW |
|
Operating and Storage Junction Temperature |
TJ, Tstg |
-65 to +150 |
℃ |
《CEDM7001》download
