The CENTRAL SEMICONDUCTOR BCV47 is a silicon NPN Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain.
|
MAXIMUM RATINGS: (TA=25℃） |
SYMBOL | Quantity | UNITS |
|
Collector-Base Voltage |
VCBO | 80 | V |
|
Collector-Emitter Voltage |
VCEO | 60 | V |
|
Emitter-Base Voltage |
VEBO | 10 | V |
|
Continuous Collector Current |
IC | 500 | mA |
|
Peak Collector Current |
ICM | 800 | mA |
|
Continuous Base Current |
IB | 100 | mA |
| Power Dissipation | PD | 350 | mW |
|
Operating and Storage Junction Temperature |
TJ, Tstg |
-65 to +150 |
℃ |
|
Thermal Resistance |
JA | 357 | ℃/W |
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