The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series devices are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose and switching applications.
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) |
SYMBOL | Quantity | UNITS |
Collector-Base Voltage |
VCBO | 50 | V |
Collector-Emitter Voltage |
VCEO | 50 | V |
Emitter-Base Voltage |
VEBO | 5.0 | V |
Continuous Collector Current |
IC | 500 | mA |
Power Dissipation | PD | 625 | mW |
Power Dissipation(TC=25°C) |
PD | 1.5 | W |
Operating and Storage Junction Temperature |
TJ, Tstg | -65 to +150 | ℃ |
Previous:2N3439 SILICON NPN TRANSISTOR