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BCV47 NPN DARLINGTON TRANSISTOR
Source:本站Time:2017/5/11 16:30:09

The CENTRAL SEMICONDUCTOR BCV47 is a silicon NPN Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain.

                          BCV47

MAXIMUM RATINGS: (TA=25℃)
SYMBOL Quantity UNITS
Collector-Base Voltage
VCBO 80 V
Collector-Emitter Voltage
VCEO 60 V
Emitter-Base Voltage
VEBO 10 V
Continuous Collector Current
IC 500 mA
Peak Collector Current
ICM 800 mA
Continuous Base Current
IB 100 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature
TJ, Tstg -65 to +150
Thermal Resistance
JA 357 ℃/W

 BCV47》download

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