一、graphene to create a major breakthrough OLED electrode

        In early January 2017, researchers fabricated OLED electrodes from graphene, which also kicked off the development of graphene in the OLED industry. It is understood that graphene with high quality, thin and flexible, high contrast, low energy consumption and other characteristics, it can create excellent hardness, excellent conductivity, flexible touch, super-transparent excellent touch panel material. This time, researchers used graphene to create OLED electrodes is a major breakthrough.

        According to experts, the size of the electrode attached to the OLED is about 2 cm x 1 cm and is manufactured using a chemical vapor deposition (CVD) process where methane and hydrogen are pumped into a vacuum chamber and the copper plate is heated to 800 ° C. The two gases chemically react, and when methane dissolves into copper, it forms graphene atoms on the surface. Once the layer is fully formed, the entire device is allowed to cool, a protective polymer sheet is applied, and copper is then chemically etched to reveal the monatomic layer of pure graphene.

        Beatrice Beyer, Ph.D., Ph.D., Ph.D., of organic electronics, e-beam and plasma technology at Fraunhofer, said: "This is a real breakthrough in extremely demanding materials research and integration. Although this is not the first flexible display to use graphene in its construction , But it introduces OLED technology for the first time, has taken a big step toward the full-color screen and quick response time. "China Graphene Industry Alliance said that at present, the global annual production capacity of graphene reaches 100 tons and will reach 1,000 tons in the next 5 to 10 years level. By 2020, the global graphene market will exceed 100 billion yuan.

二、China's new 5nm carbon nanotube CMOS devices to achieve new breakthroughs

        On January 20, Peng Lianmao and Zhang Zhiyong from Information Science and Technology Institute of Peking University made world-class breakthrough in the field of carbon nanotube electronics. For the first time, a 5 nanometer gate length high performance carbon nanocrystal transistor was prepared and proved its performance surpassed Silicon-based CMOS (Complementary Metal-Oxide-Semiconductor) field-effect transistors of the same size push transistor performance to the theoretical limit. It is understood that the group optimized the device structure and preparation process for the first time achieved a gate length of 10nm carbon nanotube top-gate CMOS field-effect transistor (corresponding to the 5nm technology node), p-type and n-type device subthreshold swing (subthreshold swing, SS) are both 70mV / DEC.

        5nm gate length carbon tube transistor (A, the use of metal contact of the carbon nanotube transistor TEM image and the use of graphene as a contact of the carbon nanotube transistor SEM; B, graphene as a contact carbon nanotube transistor diagram; C, 5nm Gate long carbon tube transistor transfer curve)

        Comparison of carbon-based CMOS devices with traditional semiconductor devices (A, schematic diagram of FET array based on carbon nanotube arrays, comparison of BD, carbon-tube CMOS devices with conventional material transistors) not only outperforms all published carbon nano-devices Devices and the lower operating voltage (0.4V) both p-type and n-type transistor performance exceed the performance of today's best (Intel Corporation 14nm node) silicon-based CMOS devices operating at 0.7V. The intrinsic gate delay of the special-purpose-tube CMOS transistor reached 0.062 ps, which is equivalent to 1/3 of the 14-nanometer silicon-based CMOS device (0.22 ps).

        At the same time, the research group also studied the contact size reduction on the performance of the device to explore the overall size of the device to reduce the carbon nanotube device contact electrode length reduced to 25nm, to ensure the device performance under the premise of achieving the overall size of 60nm Of the tube transistor, and successfully demonstrated the overall length of carbon nanotube CMOS inverters 240nm, which is currently the smallest nano-inverter circuit.

三、Nanometer LED breakthrough chip transfer rate limit

        In mid-February, researchers at Eindhoven University of Technology in the Netherlands published a new study in the journal Nature Communications about the on-chip waveguide-coupled nanopillars metal-cavity light-emitting diodes. The researchers demonstrated a nanoscale LED layer stack bonded to a silicon substrate that can be coupled to InP thin film waveguides to form a light-gate coupler.

        It is understood that this nano-LED sub-micron nano-column shape, its efficiency 1000 times higher than the previous generation of components, at room temperature, the output power of only a few nanowatts (nW), by contrast, the previous results About Pico (pW) level output power. According to the research paper, this kind of component can exhibit a rather high external quantum efficiency. At low temperatures, researchers have released power levels of 50nW, equivalent to delivering more than 400 photons per bit at 1Gb / s, a figure far above the shot noise limit sensitivity of ideal receivers. The module operates at a telecom wavelength (1.55μm) and can be tuned with a pulse waveform generator up to 5GHz.

Nanometer columnar LED schematic on silicon substrate

        The researchers said the power stage is expected to enable data transfer inside the chip with an ultra-compact light source due to the low loss of short-range interconnects and the continued advances in integrated receiver technology. Researchers have also developed a surface passivation approach that can further increase the efficiency of nano-LEDs up to 100 times while further reducing power consumption by improving Ohmic contact.

四、Help the development of quantum communication China developed a hundred millisecond-level efficient quantum memory

        Professor Pan Jianwei and Bao Xiaohui from University of Science and Technology of China used cold atomic ensemble to develop the first 100 millisecond-level quantum memory in the world, laying a solid foundation for the construction of long-distance quantum relay system. The results have been published in the international authoritative academic journal "Nature · Photonics".

        The so-called quantum communication refers to the use of quantum entanglement effect of information transmission of a new type of communication. After more than two decades of development, the discipline of quantum communication has gradually gone from theory to experiment and has been developed to practical applications. The major areas covered include quantum cryptography, quantum teleportation and quantum-intensive coding. Quantum communication is characterized by high efficiency and absolute safety. It is a research hot spot in the field of quantum physics and information science.

        In recent years, the issue of cybersecurity has been attracting worldwide attention. Various cyber-security incidents have been frequent. With the development of such events as "prism door" and changes in the global political situation, information security has drawn the attention of all countries in the world. The advent of quantum communication system, to solve the future quantum computing era of network security issues. In the field of quantum secure communications applications, our country is at the forefront of the world. In 2012, for the first time in the world, Chinese scientists and Pan Jianwei, a professor of the Chinese University of Science and Technology, successfully developed quantum teleportation and entanglement distribution in the free space on the order of one hundred kilometers. They developed a millisecond-level high-efficiency quantum memory for launching the world's first quantum communication satellite "Lay the technical foundation. On August 16, 2016, the world's first quantum science experimental satellite "Mozi", which was independently developed by our scientists, was launched and will be the first in the world to realize quantum communication between the satellite and the ground.

        However, the memory developed in 2012 still lags far behind the actual needs of long-distance quantum relays. In recent years, Pan Jianwei team developed a number of key experimental techniques such as the three-dimensional optical lattice to limit atomic motion, which greatly suppressed the de-coherence caused by atomic motion and finally achieved a storage life of 0.22 seconds and a read efficiency of 76% High-performance quantum memory.

五、Japanese research team produced high-quality 2-inch GaN chips and MOSFETs

        Japan's Mitsubishi Chemical and Fuji Electric, Toyota Central Research Institute, Kyoto University, Institute of Industrial Technology, a joint team successfully solved the gallium nitride (GaN) chip GaN semiconductor power semiconductor technology. GaN Power Semiconductors are the next generation of silicon carbide power semiconductors. Japan through the development of light-emitting diodes has accumulated GaN component technology, GaN chip production occupy the world's highest share. If we do the practical application of existing technologies, we will be in a dominant position in the world.

        Power semiconductor is conducive to energy-saving appliances, cars, trams and other industries in great demand. In GaN power semiconductors, devices such as high-electron-mobility transistors that form a horizontal GaN type on a silicon substrate have been mass-produced. However, the research on high-performance devices for forming metal-oxide semiconductor field effect transistors (MOSFETs) . The United States is also actively studying the issue of fierce competition in world development. The Japanese team produced high-quality 2-inch GaN chips and MOSFETs. Mitsubishi Chemical for power semiconductor improved GaN chip production technology "ammonia heat method." Optimize the crystal growth conditions, the average defect density of the chip, reduced to the previous one hundredth of a thousand square centimeters. Their 2018 goal is to further reduce the defects by more than one digit, enabling large 4-inch chips.

六、SK hynix introduced the world's first 72 layer 3DNAND

        On April 11, SK hynix officially announced the launch of the world's first 72-layer 256Gb 3D NAND flash memory based on the TLC array. This is another major breakthrough for SK hynix in just five months after the first 48-layer 3D NAND chip was announced in November 2016.

七、American researchers announced the realization of 1nm manufacturing process

        In early May, scientists at Brookhaven National Laboratory, a unit of the U.S. Department of Energy (DOE), announced a new world record that they succeeded in manufacturing printing equipment with a size of only 1 nm, using either e-beam printing rather than conventional Lithographic printing technology.

        Researchers at the lab creatively used electron microscopy to create smaller dimensions than conventional EBL (electron beam printing) processes. Electron-sensitive materials were greatly reduced in size by focused electron beams to The point where you can manipulate a single atom. The tool they make can dramatically change the material's properties, change from conductive to light, and interact in both states. Their accomplishments were done at the Department of Energy's Functional Nanomaterials Center, which uses STEM (Scanning Projection Electron Microscopy) at 1 nm and is spaced at 11 nm so that 1 trillion characters per square millimeter can be achieved The density of dots. Through the deviation correction STEM 2nm resolution was achieved at a half-grid of 5nm under the oxyhydroxide resist.

         In fact, this is not the first time a scientist has realized the 1nm process. Last year, another national laboratory affiliated with the US Department of Energy - Lawrence Berkeley National Laboratory also announced the 1nm process using carbon nanotubes and molybdenum disulfide And other new materials. Similarly, the technology will not be put into mass production soon, because here carbon nanotube transistor with PMMA, electron beam lithography with the same current semiconductor technology have obvious differences, let manufacturers all at once out of existing equipment This is simply impossible.

八、Scientists create "the world's thinnest" nanowires

        In late May, researchers at Cambridge and Warwick University successfully fabricated "the world's thinnest" nanowires (reducing the wire to the width of a single atom string) by injecting carbon nanotubes with tellurium. In fact, there is no pure one-dimensional (1D) or two-dimensional (2D) material in the 3D world. It is also thick even for a thin sheet of paper, but to simplify thinking we can think of graphene, a monatomic layer material, as having only length and width.

        This concept of "one-dimensional very polar nanowires" has something in common with two-dimensional graphene materials. It is made of tellurium element, only a single atom width and height. But for stability reasons, researchers still "trapped" it in carbon nanotubes. However, this single-atom microscopic scale also poses problems, such as the fact that atoms often deduce behavior that is inconsistent with the scientist's vision. In addition, the lack of structural constraints, one-dimensional material is very easy to decompose.

        According to paper author Paulo Medeiros, dealing with materials that are so small on scale usually requires placing them on a surface. The problem, however, is that these surfaces are usually reactive. Carbon nanotubes, however, are relatively chemically inert and not only immobilize this one-dimensional structure without affecting its electrical conductivity. This is just the beginning of our systematic understanding of the physical and chemical properties of a one-dimensional material, and there are still many basic physical knowledge awaiting us to uncover. In addition, the team found that by changing the nanotube diameter, they were able to control other tellurium properties. Often, this element is a semiconductor. But under the most restrictive conditions, it acts more like a metal.

九、Apple Announces New Patents Bluetooth Sensor Car to Communicate with Each Other

        August 21, Apple announced the latest patent, the patent is the use of sensor technology to help achieve mutual communication between cars. The sensor technology is similar to Bluetooth short-range wireless communications, can scan the vehicle environment, and with other vehicles, sensors and GPS data transmission.

         It is understood that Apple's development of the sensor is similar to Bluetooth short-range wireless technology, Harvatek can scan the environment, with other cars, sensors and GPS systems to communicate, but also update the driver's dashboard display to remind the driver on the road there A galloping vehicle or ambulance. Apple has not said the technology will be used in the field of autonomous driving, but describes it as an enhanced version of reversing radar and blind spot detection systems that are already in widespread use in automobiles.

        Communication between cars is nothing new. As early as 2002, Broadcom, a car communications consortium, has been researching this technology and Qualcomm has similar solutions. It is significant that Apple introduced the Bluetooth sensor patent at this time, and Apple CEO Cook said "one of the major applications is auto-investing heavily." Apple now has a modified mobile operating system, CarPlay, which is designed to work with In the car. As autonomous vehicles take on the traditional duty of more drivers, systems like CarPlay may find their way into wider use.

十、Qualcomm introduced the first 5G modem chipset

        On October 17, Qualcomm announced the official launch of its first 5G modem chipset for mobile devices in Hong Kong and successfully demonstrated the world's first 5G data connection to mobile devices. Qualcomm also demonstrated the first 5G smartphone reference design for next-generation cellular connectivity.

        Qualcomm's test at Qualcomm Technologies Lab in San Diego showed that the Qualcomm Snapdragon X50 NR modem chipset has achieved gigabit per second download speeds over multiple 100 MHz 5G carriers, Smartphones with 4G LTE wireless networks are downloaded several times faster. At the same time, Qualcomm also completed the data connection in the 28GHz millimeter wave band. At present, the Qualcomm X50 5G baseband supports only the 28GHz mmWave millimeter wave standard, and is only supported by KT in Korea and Verizon in the United States.

        To demonstrate the 5G data connection for mobile devices, Qualcomm also introduced the first 5G smartphone as a reference design. It is reported that this phone uses a full screen design, positive fingerprint, fingerprint recognition support under the screen, the rear dual camera, the thickness of 9mm. Qualcomm said 5G smartphones and networks will be commercially available in the first half of 2019, with 1-to-2-year debugging time required for 5G basebands, radios and networks. Cristiano Amon, Executive Vice President, Qualcomm, said: "This milestone and our 5G Smartphone Reference Design demonstrate Qualcomm Technologies is driving a new 5G air interface in the mobile terminal space to enhance the mobile broadband experience for consumers worldwide."

        In fact, Qualcomm released the world's first 5G baseband solution "Snapdragon X50 5G Modem" last year, and announced the completion of this test of the 5G New Radio at the Qualcomm 5G Summit in February. It is expected that in 2018 Relevant equipment available. In addition to Qualcomm, Intel, Apple, Huawei and other manufacturers are working hard to promote the 5G revolution. 5G technology will likely become the basis for the popularity of IoT technology in the future. According to Li Weixing, vice president of Qualcomm's QCT technology, 5G technology is expected to be used in areas such as energy management, wearable devices, networked healthcare, object tracking and environmental monitoring.