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CJD127 PNP POWER DARLINGTON TRANSISTORS
Source:本站Time:2017/5/12 12:02:06

The CENTRAL SEMICONDUCTOR CJD122 and CJD127 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications.

       CJD127

MAXIMUM RATINGS: (TA=25℃)
SYMBOL Quantity UNITS
Collector-Base Voltage
VCBO 100 V
Collector-Emitter Voltage
VCEO 100 V
Emitter-Base Voltage
VEBO 5.0 V
Continuous Collector Current
IC 8.0 A
Peak Collector Curren
ICM
16 A
Continuous Base Current
IB
120 mA
Power Dissipation
PD 20 W
Power Dissipation (TA=25℃)
PD 1.75 W
Operating and Storage Junction Temperature
TJ, Tstg -65 to +150
Thermal Resistance JC 6.25 ℃/W
Thermal Resistance
JA 71.4 ℃/W

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